Renesas Electronics TP65H030G4Px 650V 30mΩ Gallium Nitride (GaN) FETs are available in TOLT, TO247, and TOLL packages. These GaN FETs use the Gen IV Plus SuperGaN® platform, which combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and reliability. Renesas Electronics GaN power semiconductors provide high-performance and reliable solutions across a broad spectrum of applications, ranging from 25W to 10kW. Renesas GaN power semiconductors' unique architecture leverages GaN's inherent performance and offers diverse package options, including compact PQFN, robust TO leaded, and various surface mount packages with both bottom-side and top-side cooling. The normally off architecture, extensive package variety, and integrated low-voltage silicon MOSFET front end, which facilitates compatibility with standard silicon drivers, creates a more straightforward and cost-effective GaN adaptation for system developers.
