ROHM Semiconductor RBQxxBGE Schottky Barrier Diodes

RBQxxBGE Schottky Barrier Diodes from ROHM feature a silicon epitaxial planar structure and 45V or 65V repetitive peak reverse voltage. The RBQxxBGE Schottky Barrier Diodes offer high reliability, a low IR, and cathode common dual type. The ROHM RBQxxBGE Diodes are designed for switching power supply applications.

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