Nexperia GANB1R2-040QBA and GANB012-040CBA GaN HEMTs are 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs). The GANB1R2-040QBA is offered in a Very-Thin-Profile Quad Flat No-Lead (VQFN) package. The GANB1R2-040QBA is a normally-off e-mode device delivering superior performance and very low on-state resistance. The Nexperia GANB012-040CBA is available in a Wafer-Level Chip Scale (WLCSP) package. The GANB012-040CBA is a normally-off e-mode device that provides superior performance.
